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Article Dans Une Revue IET Circuits, Devices & Systems Année : 2020

In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation

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hal-04355283 , version 1 (20-12-2023)

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Wadia Jouha, Ahmed El Oualkadi, Pascal Dherbécourt, Mohamed Lamine Masmoudi, Joubert Eric. In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation. IET Circuits, Devices & Systems, 2020, 14 (2), pp.222-228. ⟨10.1049/iet-cds.2018.5509⟩. ⟨hal-04355283⟩
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