Radiated EMI evolution of power SiC MOSFET in a boost converter after short-circuit aging tests - Normandie Université Access content directly
Journal Articles Microelectronics Reliability Year : 2019
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hal-02305454 , version 1 (04-10-2019)

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Shawki Douzi, Moncef Kadi, Habib Boulzazen, Mohamed Tlig, Jaleleddine Ben Hadj Slama. Radiated EMI evolution of power SiC MOSFET in a boost converter after short-circuit aging tests. Microelectronics Reliability, 2019, pp.113398. ⟨10.1016/j.microrel.2019.113398⟩. ⟨hal-02305454⟩
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