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Article Dans Une Revue Journal of Microscopy Année : 2023

Field‐dependent abundances of hydride molecular ions in atom probe tomography of III‐N semiconductors

Résumé

Abstract We investigate the microscopic behaviour of hydrogen‐containing species formed on the surface of III‐N semiconductor samples by the residual hydrogen in the analysis chamber in laser‐assisted atom probe tomography (APT). We analysed AlGaN/GaN heterostructures containing alternate layers with a thickness of about 20 nm. The formation of H‐containing species occurs at field strengths between 22 and 26 V/nm and is independent of the analysed samples. The 3D APT reconstruction makes it possible to map the evolution of the surface behaviour of these species issued by chemical reactions. The results highlight the strong dependence of the relative abundances of hydrides on the surface field during evaporation. The relative abundances of the hydrides decrease when the surface field increases due to the evolution of the tip shape or the different evaporation behaviour of the different layers.
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Dates et versions

hal-04344639 , version 1 (14-12-2023)

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Aissatou Diagne, Luis Gonzalez Garcia, Samba Ndiaye, Noëlle Gogneau, Maria Vrellou, et al.. Field‐dependent abundances of hydride molecular ions in atom probe tomography of III‐N semiconductors. Journal of Microscopy, 2023, ⟨10.1111/jmi.13233⟩. ⟨hal-04344639⟩
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