A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications - Normandie Université Access content directly
Journal Articles Microelectronics Reliability Year : 2022

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hal-03882052 , version 1 (02-12-2022)

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Chawki Douzi, Moncef Kadi, Moncef Kadi, Pascal Dherbécourt, Mohamed Akram Besserour, et al.. A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications. Microelectronics Reliability, 2022, 138, pp.114777. ⟨10.1016/j.microrel.2022.114777⟩. ⟨hal-03882052⟩
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