Exploring swift-heavy ion irradiation of InGaN/GaN multiple quantum wells for green-emitters: the use of Raman and photoluminescence to assess the irradiation effects on the optical and structural properties - Normandie Université Access content directly
Journal Articles Journal of Materials Chemistry C Year : 2021

Exploring swift-heavy ion irradiation of InGaN/GaN multiple quantum wells for green-emitters: the use of Raman and photoluminescence to assess the irradiation effects on the optical and structural properties

José Cardoso
Nabiha Ben Sedrine
Przemysław Jóźwik
Miguel Sequeira
  • Function : Author
Christian Wetzel
  • Function : Author
Clara Grygiel
Katharina Lorenz
Teresa Monteiro
Maria Rosário P. Correia

Abstract

Xe SHI irradiation of InGaN/GaN MQWs leads to surface damage and intermixing at the interfaces. The introduced defects cause a strong quenching of the luminescence as well as a change in the excitation mechanisms.

Dates and versions

hal-03805380 , version 1 (07-10-2022)

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José Cardoso, Nabiha Ben Sedrine, Przemysław Jóźwik, Miguel Sequeira, Christian Wetzel, et al.. Exploring swift-heavy ion irradiation of InGaN/GaN multiple quantum wells for green-emitters: the use of Raman and photoluminescence to assess the irradiation effects on the optical and structural properties. Journal of Materials Chemistry C, 2021, 9 (28), pp.8809-8818. ⟨10.1039/d1tc01603b⟩. ⟨hal-03805380⟩
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