Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET - Normandie Université Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 2020

Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

Abstract

The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
No file

Dates and versions

hal-03511987 , version 1 (05-01-2022)

Identifiers

Cite

K. Niskanen, A. Touboul, Rosine Coq Germanicus, A. Michez, A. Javanainen, et al.. Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET. IEEE Transactions on Nuclear Science, 2020, 67 (7), pp.1365-1373. ⟨10.1109/TNS.2020.2983599⟩. ⟨hal-03511987⟩
56 View
0 Download

Altmetric

Share

Gmail Facebook X LinkedIn More