Journal Articles
Microelectronics Reliability
Year : 2021
Niemat Moultif : Connect in order to contact the contributor
https://normandie-univ.hal.science/hal-03469148
Submitted on : Tuesday, December 7, 2021-3:07:19 PM
Last modification on : Tuesday, October 17, 2023-11:24:10 AM
Dates and versions
Identifiers
- HAL Id : hal-03469148 , version 1
- DOI : 10.1016/j.microrel.2021.114295
Cite
Niemat Moultif, Sébastien Duguay, O. Latry, M. Ndiaye, Eric Joubert. Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating. Microelectronics Reliability, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩. ⟨hal-03469148⟩
Collections
23
View
0
Download