Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling - Normandie Université Access content directly
Journal Articles Journal of Applied Physics Year : 2021

Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

P. Dumas
P.-L. Julliard
  • Function : Author
J. Borrel
S. Duguay
F. Hilario
F. Deprat
  • Function : Author
V. Lu
  • Function : Author
W. Zhao
  • Function : Author
W Zou
  • Function : Author
E. Arevalo
  • Function : Author
D. Blavette
  • Function : Author
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Dates and versions

hal-03468001 , version 1 (06-12-2021)

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P. Dumas, P.-L. Julliard, J. Borrel, S. Duguay, F. Hilario, et al.. Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling. Journal of Applied Physics, 2021, 129 (19), pp.195706. ⟨10.1063/5.0049782⟩. ⟨hal-03468001⟩

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