Interface dislocations in InxGa1–xN/GaN heterostructures - Normandie Université Access content directly
Journal Articles Phys.Status Solidi A Year : 2016
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hal-03351874 , version 1 (22-09-2021)

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  • HAL Id : hal-03351874 , version 1

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Q.T. Li, A. Minj, M-P Chauvat, Jun Chen, Ruterana P.. Interface dislocations in InxGa1–xN/GaN heterostructures. Phys.Status Solidi A, 2016. ⟨hal-03351874⟩
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