Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation - Normandie Université Access content directly
Journal Articles Nature Communications Year : 2014

Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation

Abstract

The controlled creation of defects in silicon carbide represents a major challenge. A wellknown and efficient tool for defect creation in dielectric materials is the irradiation with swift (EkinZ500 keV/amu) heavy ions, which deposit a significant amount of their kinetic energy into the electronic system. However, in the case of silicon carbide, a significant defect creation by individual ions could hitherto not be achieved. Here we present experimental evidence that silicon carbide surfaces can be modified by individual swift heavy ions with an energy well below the proposed threshold if the irradiation takes place under oblique angles. Depending on the angle of incidence, these grooves can span several hundreds of nanometres. We show that our experimental data are fully compatible with the assumption that each ion induces the sublimation of silicon atoms along its trajectory, resulting in narrow graphitic grooves in the silicon carbide matrix.

Dates and versions

hal-03201241 , version 1 (18-04-2021)

Identifiers

Cite

Oliver Ochedowski, Orkhan Osmani, Martin Schade, Benedict Kleine Bussmann, Brigitte Ban-D’etat, et al.. Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation. Nature Communications, 2014, 5 (1), ⟨10.1038/ncomms4913⟩. ⟨hal-03201241⟩
40 View
0 Download

Altmetric

Share

Gmail Facebook X LinkedIn More