Defect engineering of single- and few-layer MoS 2 by swift heavy ion irradiation - Normandie Université Access content directly
Journal Articles 2D Materials Year : 2017

Defect engineering of single- and few-layer MoS 2 by swift heavy ion irradiation

Abstract

Wehave investigated the possibility to use swift heavy ion irradiation for nano-structuring supported and freestanding ultra-thin MoS2 samples. Our comprehensive study of the ion-induced morphological changes in various MoS2 samples shows that depending on the irradiation parameters a multitude of extended defects can be fabricated. These range from chains of nano-hillocks in bulk-like MoS2, and foldings in single and bilayer MoS2, to unique nano-incisions in supported and freestanding single layers of MoS2. Our data reveals that the primary mechanism responsible for the incisions in the ultrathin supported samples is the indirect heating by the SiO2 substrate.We thus conclude that an energy of less than 2 keV pernmtrack length is sufficient to fabricate nano-incisions in MoS2 which is compatible with the use of the smallest accelerators.

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hal-03189372 , version 1 (06-04-2021)

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Lukas Madauss, Oliver Ochedowski, Henning Lebius, Brigitte Ban-D’etat, Carl Naylor, et al.. Defect engineering of single- and few-layer MoS 2 by swift heavy ion irradiation. 2D Materials, 2017, 4 (1), pp.015034. ⟨10.1088/2053-1583/4/1/015034⟩. ⟨hal-03189372⟩
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