Parametric Optimisation of New SiC Power MOSFET Model Using Experimental Performance Data - Normandie Université Access content directly
Conference Papers Year : 2020
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hal-02421118 , version 1 (20-12-2019)

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  • HAL Id : hal-02421118 , version 1

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Ali Alhoussein, Hadi Alawieh, Zouheir Riah, Yacine Azzouz. Parametric Optimisation of New SiC Power MOSFET Model Using Experimental Performance Data. PCIM Europe Conference 2020 : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management., May 2020, NürnbergMesse, Germany. ⟨hal-02421118⟩
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