A New SiC Power MOSFET Model With a Parameter Optimization Procedure - Normandie Université Access content directly
Conference Papers Year : 2019
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hal-02419913 , version 1 (19-12-2019)

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Ali Alhoussein, Hadi Alawieh, Z. Riah, Yacine Azzouz. A New SiC Power MOSFET Model With a Parameter Optimization Procedure. 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe), Sep 2019, Genova, Italy. pp.P.1-P.11, ⟨10.23919/EPE.2019.8915569⟩. ⟨hal-02419913⟩
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