A New Modeling Approach for Predicting the Static and Dynamic Behavior of SiC Power MOSFETs - Normandie Université Access content directly
Conference Papers Year : 2018

A New Modeling Approach for Predicting the Static and Dynamic Behavior of SiC Power MOSFETs

Abstract

This paper presents a new SiC power MOSFET model developed with emphasis on being able to reproduce the dynamic behavior during the switching phase, in order to have a complete model that can be ultimately used in EMC simulations of switched-mode power supplies. The model is based on the SPICE LEVEL-3 MOSFET model with added parasitic elements and modified expressions. The static as well as the dynamic, modeling schemes and model behavior are presented. Followed by a series of tests that permits the identification of model's characteristics including the capacitance-voltage dependency, the static I-V characteristics and intrinsic diode characteristics. These tests are grouped together by a MATLAB graphical user interface (GUI) that will allow the automation and the customization of the procedure. Finally we present an optimization algorithm developed to fit the model parameters to the baseline data, whether it originates from measurement data or from datasheets.v
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Dates and versions

hal-02419116 , version 1 (19-12-2019)

Identifiers

Cite

Ali Alhoussein, Hadi Alawieh, Z. Riah, Yacine Azzouz. A New Modeling Approach for Predicting the Static and Dynamic Behavior of SiC Power MOSFETs. 2018 International Symposium on Electromagnetic Compatibility (EMC EUROPE), Aug 2018, Amsterdam, France. pp.648-653, ⟨10.1109/EMCEurope.2018.8484991⟩. ⟨hal-02419116⟩
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