Behavoir study of a 600v gan transistor under short-circuit experimental test - Normandie Université Access content directly
Conference Papers Year : 2017
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hal-02310344 , version 1 (10-10-2019)

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  • HAL Id : hal-02310344 , version 1

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Jian Zhi Fu, Francois Fouquet, Moncef Kadi, Pascal Dherbécourt. Behavoir study of a 600v gan transistor under short-circuit experimental test. TELECOM 2017 et 10ème JFMMA, May 2017, Rabat, Morocco. ⟨hal-02310344⟩
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