Journal Articles
Semiconductor Science and Technology
Year : 2011
Moncef KADI : Connect in order to contact the contributor
https://normandie-univ.hal.science/hal-02308187
Submitted on : Tuesday, October 8, 2019-1:08:37 PM
Last modification on : Monday, November 6, 2023-12:08:30 PM
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- HAL Id : hal-02308187 , version 1
- DOI : 10.1088/0268-1242/26/2/025003
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A Alaeddine, C. Genevois, Moncef Kadi, F. Cuvilly, K. Daoud. Degradation of Au–Ti contacts of SiGe HBTs during electromagnetic field stress. Semiconductor Science and Technology, 2011, 26 (2), pp.025003. ⟨10.1088/0268-1242/26/2/025003⟩. ⟨hal-02308187⟩
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