Effects of electromagnetic near-field stress on SiGe HBT’s reliability - Normandie Université Access content directly
Journal Articles Microelectronics Reliability Year : 2009
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hal-02306966 , version 1 (07-10-2019)

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A. Alaeddine, Moncef Kadi, K. Daoud, B. Mazari. Effects of electromagnetic near-field stress on SiGe HBT’s reliability. Microelectronics Reliability, 2009, 49 (9-11), pp.1029-1032. ⟨10.1016/j.microrel.2009.07.014⟩. ⟨hal-02306966⟩
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