Study of electromagnetic field stress impact on SiGe heterojunction bipolar transistor performance - Normandie Université Access content directly
Journal Articles International Journal of Microwave and Wireless Technologies Year : 2009
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hal-02306952 , version 1 (07-10-2019)

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Ali Alaeddine, Moncef Kadi, Kaouther Daoud, Hichame Maanane, Philippe Eudeline. Study of electromagnetic field stress impact on SiGe heterojunction bipolar transistor performance. International Journal of Microwave and Wireless Technologies, 2009, 1 (6), pp.475-482. ⟨10.1017/S1759078709990572⟩. ⟨hal-02306952⟩
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