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Journal Articles Microelectronics Reliability Year : 2010

Characteristics degradation of the SiGe HBT under electromagnetic field stress

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hal-02306946 , version 1 (07-10-2019)

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A. Alaeddine, Moncef Kadi, K. Daoud, B. Beydoun. Characteristics degradation of the SiGe HBT under electromagnetic field stress. Microelectronics Reliability, 2010, 50 (12), pp.1961-1966. ⟨10.1016/j.microrel.2010.07.002⟩. ⟨hal-02306946⟩
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