Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress - Normandie Université Access content directly
Journal Articles Microelectronics Reliability Year : 2011

Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress

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hal-02306934 , version 1 (07-10-2019)

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S. Khemiri, Moncef Kadi, A. Louis. Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress. Microelectronics Reliability, 2011, 51 (9-11), pp.1783-1787. ⟨10.1016/j.microrel.2011.07.074⟩. ⟨hal-02306934⟩
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