Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests - Normandie Université Access content directly
Journal Articles Microelectronics Reliability Year : 2018

Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests

Abstract

The electromagnetic compatibility (EMC) study is an indispensable step in the development cycle of power system modules. In power applications using normally off transistors, short-circuit mode can be recurrent during operation, especially when powering converters. In this paper, we present a study on the evolution of conducted interferences (in common and differential mode voltages) generated by a static converter after an aging test of silicon carbide (SiC) MOSFET transistors from the first generation of CREE subjected to repetitive short-circuit operations. This work presents an experimental investigation of the repetitive short-circuit aging effect of N Channel power SiC MOSFETs on the amplitude of resonances in the interference spectra after aging tests. Experimental results are presented and analyzed.
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hal-02305461 , version 1 (04-10-2019)

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Shawki Douzi, Moncef Kadi, Habib Boulzazen, Mohamed Tlig, Jaleleddine Ben Hadj Slama. Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests. Microelectronics Reliability, 2018, 88-90, pp.219-224. ⟨10.1016/j.microrel.2018.06.092⟩. ⟨hal-02305461⟩
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