Reaction‐bonded B 4 C/SiC composites synthesized by microwave heating - Normandie Université Access content directly
Journal Articles International Journal of Applied Ceramic Technology Year : 2019

Reaction‐bonded B 4 C/SiC composites synthesized by microwave heating

Abstract

The reaction-bonding technique was used to synthesize boron carbide (B4C) - silicon carbide (SiC) composites by microwave heating. Preforms of porous B4C were obtained by compaction followed or not by partial densification. Then, the material was infiltrated by molten silicon under a microwave heating. The influence of the thermal cycles (T: 1400-1500°C, t: 5-120 minutes) is low. The hardness of boron carbide is comparable to that of alumina (15-19 GPa) for a much lower density (≈2.5 g/cm3 for B4C-based material instead of 3.95 g/cm3 for alumina). These properties make this composite, obtained by microwave heating, a good candidate for ballistic applications.
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Dates and versions

hal-02264680 , version 1 (07-08-2019)

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Mathieu Dutto, Dominique Goeuriot, Sébastien Saunier, Sylvain Marinel, Nachum Frage, et al.. Reaction‐bonded B 4 C/SiC composites synthesized by microwave heating. International Journal of Applied Ceramic Technology, 2019, 16 (4), pp.1287-1294. ⟨10.1111/ijac.13211⟩. ⟨hal-02264680⟩
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