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Conference Papers Year : 2015

Hot carrier injection effect on threshold voltage of NMOSFETs

Abstract

In this paper, Hot Carrier (HC) injection mechanism effect on NMOSFETs' Threshold Voltage (VTh) is examined. The purpose of this work is to predict VTh degradation, under DC hot carrier stress conditions, of NMOS transistors for different channel lengths and widths, using a simulation reliability tool owned by NXP semiconductors and validate simulation results with HC degradation model. VTh extraction is conducted using Constant Current (CC) threshold voltage method. © 2015 IEEE.
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Dates and versions

hal-02184128 , version 1 (15-07-2019)

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I. Lahbib, A. Doukkali, P. Martin, G. Imbert, D. Raoulx. Hot carrier injection effect on threshold voltage of NMOSFETs. 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2015, Lausanne, Switzerland. pp.164-167, ⟨10.1109/PRIME.2015.7251360⟩. ⟨hal-02184128⟩
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