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Conference Papers Year : 2018

Experimental study of 600V GaN transistor under the short-circuit aging tests

Abstract

This paper presents experimental short-circuit aging tests of a 600V GaN (Gallium nitrite) GIT (Gate Injection Transistor). The short circuit aging tests effect under the drain voltage of 35 V and the two short-circuit durations (1.1ms, 1.9ms) are investigated. The degradation mode due to different energy applied during the short circuit aging tests is well shown in this paper. A comparison with a SiC (Silicon carbide) Technology transistor, subject to equivalent aging test, is proposed in the paper.
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Dates and versions

hal-02181678 , version 1 (12-07-2019)

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J-Z. Fu, F. Fouquet, M. Kadi, Pascal Dherbécourt. Experimental study of 600V GaN transistor under the short-circuit aging tests. 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.249-253, ⟨10.1109/MELCON.2018.8379102⟩. ⟨hal-02181678⟩
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