Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests - Normandie Université Access content directly
Journal Articles Microelectronics Reliability Year : 2018

Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests

Abstract

In this article, a repetitive and non-destructive short-circuit aging test is developed to characterize the electrical parameters evolutions of a 600 V GaN Gate Injection Transistor (GIT). The evolutions of C-V and I-V characteristics during the repetitive short-circuit tests with a relatively low bias voltage and long pulse duration are presented and summarized. The capacitance CGD at on-state mode and the gate current at relative high gate voltage show significant degradations before and after test.
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hal-02181673 , version 1 (12-07-2019)

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J.Z. Fu, F. Fouquet, M. Kadi, Pascal Dherbécourt. Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests. Microelectronics Reliability, 2018, 88-90, pp.652-655. ⟨10.1016/j.microrel.2018.06.034⟩. ⟨hal-02181673⟩
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