Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis - Normandie Université Access content directly
Journal Articles Diamond and Related Materials Year : 2014

Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis

Pascal Dherbécourt
O. Latry
Fabien Cuvilly
Martin Brault
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hal-02156382 , version 1 (14-06-2019)

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P. Denis, Pascal Dherbécourt, O. Latry, C. Genevois, Fabien Cuvilly, et al.. Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis. Diamond and Related Materials, 2014, 44, pp.62-70. ⟨10.1016/j.diamond.2014.02.002⟩. ⟨hal-02156382⟩
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