Atomic-Scale Characterization of N-Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography - Normandie Université Access content directly
Journal Articles Journal of Physical Chemistry C Year : 2019

Atomic-Scale Characterization of N-Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography

Abstract

Structural properties of undoped, As-doped, and P-doped silicon nanocrystals (Si-Ncs) embedded in a SiO 2 matrix have been investigated using atom probe tomography. It turns out that both As and P atomic distributions have the same behavior in such system, withthe efficient incorporation of impurities in the core of Si-Ncs even in the smallest ones (<2 nm). The impurity level measured in Si-Ncs is strongly size-dependent, and statistically, the smallest Si-Ncs can contain the heaviest doping composition. Moreover, this study reveals an influence of the dopant nature on the kinetic growth of Si-Ncs, leading to the clustering of larger nanocrystals in P-doped samples.
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Dates and versions

hal-02082140 , version 1 (07-05-2020)

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Rémi Demoulin, Manuel Roussel, Sébastien Duguay, Dominique Muller, Daniel Mathiot, et al.. Atomic-Scale Characterization of N-Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography. Journal of Physical Chemistry C, 2019, 123 (12), pp.7381-7389. ⟨10.1021/acs.jpcc.8b08620⟩. ⟨hal-02082140⟩
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