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Article Dans Une Revue IET Circuits, Devices & Systems Année : 2020

RF performance reliability of power N‐LDMOS under pulsed‐RF aging life test in radar application S‐band

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hal-04355267 , version 1 (20-12-2023)

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Mohamed Ali Belaïd, Ahmed Almusallam, Mohamed Lamine Masmoudi. RF performance reliability of power N‐LDMOS under pulsed‐RF aging life test in radar application S‐band. IET Circuits, Devices & Systems, 2020, 14 (6), pp.805-810. ⟨10.1049/iet-cds.2019.0552⟩. ⟨hal-04355267⟩
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