Modeling of the major and minor I-V loops in La0.3Ca 0.7 MnO 3 films using asymmetric logistic hysterons

The conduction characteristics of La 1/3 Ca 2/3 MnO 3 (LCMO) films grown by pulsed laser deposition were investigated. The devices exhibit bipolar resistive switching effect with intermediate conduction states achievable by the application of positive and negative voltage ramps. The I-V curves are modeled using a nonlinear memristive approach based on the double-diode equation and the solution of the generalized logistic differential equation. © 2015 IEEE.

Mots clés

Differential equations Manganese oxide Memristors Pulsed laser deposition Switching systems Conduction state Hysterons I - V curve Logistic differential equations Negative voltage Resistive switching Nonlinear equations Mathematical model Logistics Switches Films Resistance Integrated circuit modeling Calcium compounds Lanthanum compounds Manganese compounds Semiconductor diodes Semiconductor thin films

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Chimie Cristallographie Chimie théorique et/ou physique Matériaux

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https://normandie-univ.hal.science/hal-02184703

Soumis le : mardi 16 juillet 2019-11:29:28

Dernière modification le : mercredi 24 avril 2024-13:36:03

Dates et versions

hal-02184703 , version 1 (16-07-2019)

Identifiants

HAL Id : hal-02184703 , version 1
DOI : 10.1109/MEMRISYS.2015.7378398

Citer

W.R. Acevedo, D. Rubi, F.G. Marlasca, F. Golmar, U. Lüders, et al.. Modeling of the major and minor I-V loops in La0.3Ca 0.7 MnO 3 films using asymmetric logistic hysterons. 2015 International Conference on Memristive Systems (MEMRISYS), Nov 2015, Paphos, Cyprus. pp.7378398, ⟨10.1109/MEMRISYS.2015.7378398⟩. ⟨hal-02184703⟩

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