The structure and resistive properties of buried SrVO3 layers between two insulating LaVO3 layers are investigated by varying the thickness of the SrVO3 layers between 3 and 35 monolayers. The thickest SrVO3 layer shows a bulklike metallic behavior, while in the thinnest SrVO3 layer, a weak localization regime is observed below 100 K manifesting a logarithmic temperature dependence. Angular-dependent magnetoresistance measurements indicate a cylindric shape of the Fermi surface, and therefore a two-dimensional transport in the thinnest buried SrVO3 layer. The modification of the charge carrier properties by the reduced thickness of the SrVO3 layer are furthermore underlined by the appearance of a relatively strong positive magnetoresistance under a magnetic field perpendicular to the sample surface. The present study therefore highlights a way to synthesize oxide electrodes with reduced dimension for future oxide electronics application. © 2015 American Physical Society.