Characterization of nanostructure in low dose Fe-implanted p-type 6H-SiC using atom probe tomography
Résumé
P-doped 6H-SiC substrates were implanted with Fe ions. During implantation the samples were maintained at 550 °C with energies ranging from 30 to 160 keV in order to produce a diluted magnetic semiconductor (DMS) with a 2% Fe homogeneous concentration to a depth of about 100 nm thickness. The effects of rapid thermal annealing on the microstructure were examined by atom probe tomography (APT). The study shows evidence of the formation of Fe rich nanoclusters after annealing which contain core magnetic phases that contribute to the magnetic properties.
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