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Journal Articles Scripta Materialia Year : 2009

Three-dimensional atomic-scale imaging of boron clusters in implanted silicon

Emmanuel Cadel
François Vurpillot
Dominique Mangelinck
D. Blavette

Abstract

The implantation profile of boron in silicon annealed at 600 °C for 1 h as given by laser-assisted wide-angle atom probe was found to be in good agreement with secondary ion mass spectrometry data. Numerous boron clusters in the form of tiny platelets (3-6 nm diameter, 2 nm thick) were identified and interpreted as boron interstitial clusters (BICs). These BICs contained on average 7 at.% B with a core level that reaches 10 at.%. © 2008 Acta Materialia Inc.

Dates and versions

hal-01953258 , version 1 (12-12-2018)

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O. Cojocaru-Mirédin, Emmanuel Cadel, François Vurpillot, Dominique Mangelinck, D. Blavette. Three-dimensional atomic-scale imaging of boron clusters in implanted silicon. Scripta Materialia, 2009, 60 (5), pp.285-288. ⟨10.1016/j.scriptamat.2008.10.008⟩. ⟨hal-01953258⟩
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