Interfacial contribution to the dielectric response in semiconducting LaBiMn4∕3Co2∕3O6
Abstract
Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4∕3Co2∕3O6
. Colossal dielectric permittivity is often measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution can then be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples.
This work was carried out in the framework of the the STREP MaCoMuFi (NMP3-CT-2006-033221) and the STREP CoMePhS (NMP4 CT-2005-517039) supported by the European Community and the CNRS. The authors would also like to acknowledge W.C. Sheets, Ch. Simon, and J.F. Scott for careful reading of the manuscript.