Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics - Normandie Université Access content directly
Journal Articles IEEE Transactions on Device and Materials Reliability Year : 2020

Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics

Wadia Jouha
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Mohamed Lamine Masmoudi
Eric Joubert
Pascal Dherbécourt
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hal-03174373 , version 1 (19-03-2021)

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Wadia Jouha, Mohamed Lamine Masmoudi, Ahmed El Oualkadi, Eric Joubert, Pascal Dherbécourt. Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics. IEEE Transactions on Device and Materials Reliability, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩. ⟨hal-03174373⟩
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