Journal Articles
IEEE Transactions on Device and Materials Reliability
Year : 2020
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https://normandie-univ.hal.science/hal-03174373
Submitted on : Friday, March 19, 2021-10:34:16 AM
Last modification on : Tuesday, October 17, 2023-11:24:10 AM
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Wadia Jouha, Mohamed Lamine Masmoudi, Ahmed El Oualkadi, Eric Joubert, Pascal Dherbécourt. Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics. IEEE Transactions on Device and Materials Reliability, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩. ⟨hal-03174373⟩
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