Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains - Normandie Université Access content directly
Journal Articles Applied Surface Science Year : 2007

Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains

Abstract

In this work, we demonstrate that atomic force microscopy allows topography measurement as well as the local electrical properties of very high-doped polysilicon film prior to any subsequent annealing. AFM and TEM observations showed the columnar microstructure of the polysilicon layer. The electrical effect of this microstructure was characterized using SCM, KFM and C-AFM. Each electric mode gives additional information on the local properties of the polysilicon layer.

Dates and versions

hal-02533135 , version 1 (06-04-2020)

Identifiers

Cite

Rosine Coq Germanicus, E. Picard, B. Domenges, K. Danilo, R. Rogel. Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains. Applied Surface Science, 2007, 253 (14), pp.6006-6012. ⟨10.1016/j.apsusc.2006.12.114⟩. ⟨hal-02533135⟩
176 View
0 Download

Altmetric

Share

Gmail Facebook X LinkedIn More