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Journal Articles Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Year : 2007

Analytic description of scanning capacitance microscopy

Abstract

Scanning capacitance microscopy (SCM) is a doping profile extraction using a nanometric probe as a gate of a metal-oxide-semiconductor (MOS) structure and measuring the differential capacitance. Thanks to the complete MOS equations, the authors propose in this article a description of the differential capacitance calculation. This analytic presentation is based on the solution of the Poisson-Boltzmann equation in the unidimensional mode in silicon and a decomposition of the probe in elementary rings giving capacitance from the surface probe and silicon. As [dC(Vg)/dVg]α(dΨs/dVg), this presentation yields to the importance of the surface band bending Ψs at the oxide-semiconductor interface. The dC(Vg)/dVg calculation shows that the contact of the probe with the sample has its main contribution over a few nanometers. Results are discussed to obtain a calibration of a SCM probe available in a large range of doping and voltage and to assess the dC(Vg)/dVg signal after erosion of the probe by successive scans.
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Dates and versions

hal-02533128 , version 1 (06-04-2020)

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Hugues Murray, Rosine Coq Germanicus, Aziz Doukkali, Patrick Martin, Bernadette Domengès, et al.. Analytic description of scanning capacitance microscopy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2007, 25 (4), pp.1340. ⟨10.1116/1.2759218⟩. ⟨hal-02533128⟩
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